Combination metal oxide semi-conductor field effect transistor (MOSFET) and junction field effect transistor (JFET) operable for modulating current voltage response or mitigating electromagnetic or radiation interference effects by altering current flow through the MOSFETs semi-conductive channel region (SCR)
US9595519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Nov 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/615
Abstract
Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using a combination of a metal-oxide semiconductor field effect transistor (MOSFET) and junction field effect transistor (JFET) disposed perpendicularly and within a certain orientation to each other. An embodiment of the invention can be formed and operable for modulating current and/or voltage response or mitigating electromagnetic or radiation interference effects on the MOSFET by controlling a semi-conductive channel region (SCR) using an additional gate, e.g., JFET, disposed perpendicularly with respect to the MOSFET configured to generate an electromagnetic field into the MOSFET's semi-SCR. A control system for controlling operation is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as radio frequency transmitter or receiver systems. Methods of operation for a variety of modes are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.