Thin film transistor substrate and display device
US9595544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2013 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Aug 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a thin film transistor substrate and a display device that prevent peeling. The thin film transistor substrate includes: an insulating substrate; a thin film transistor; a first inorganic insulating layer; an organic insulating layer stacked on the first inorganic insulating layer; and a second inorganic insulating layer stacked on the organic insulating layer. The organic insulating layer includes a side covered with the second inorganic insulating layer. The first inorganic insulating layer may contain silicon oxide. The organic insulating layer may contain photosensitive resin. The second inorganic insulating layer may contain silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.