Semiconductor device and method for manufacturing the same
US9595590B2 · kind B2 · utility
6Cited by
6References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2014 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Mar 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region disposed in the well region, a gate electrode disposed above the well region, a thin gate insulating layer and a thick gate insulating layer disposed under the gate electrode, the thick gate insulating layer being disclosed closer to the drain region than the thin gate insulating layer, and an extended drain junction region disposed below the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.