Strain engineered bandgaps

US9595624B2 · kind B2 · utility

Assignees

• Massachusetts Institute of Technology · US
• Peking University · CN

Inventors

• Ju Li · Weston, US
• Xiaofeng Qian · Winchester, US
• Ji Feng · Sunnyvale, US

Key dates

• Filing date: Jul 12, 2013
• Grant date: Mar 14, 2017
• Expiry date: Sep 30, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/822

Abstract

An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, the optoelectronic device includes a first optoelectronic material that is inhomogeneously strained. A first charge carrier collector and a second charge carrier collector are each in electrical communication with the first optoelectronic material and are adapted to collect charge carriers from the first optoelectronic material. In another embodiment, a method of photocatalyzing a reaction includes using a strained optoelectronic material.