Microstructured silicon radiation detector

US9595628B1 · kind B1 · utility

Assignee

• Sandia Corporation · US

Inventors

• Murat Okandan · Edgewood, US
• Mark S. Derzon · Albuquerque, US
• Bruce L. Draper · Albuquerque, US

Key dates

• Filing date: Aug 11, 2014
• Grant date: Mar 14, 2017
• Expiry date: Aug 11, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 μm or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.