Nanostructure semiconductor light emitting device having rod and capping layers of differing heights
US9595637B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2015 |
| Grant date | Mar 14, 2017 |
| Priority date | — |
| Expiry date | Oct 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.