Patent · US Active

Pressure sensor and manufacture method thereof

US9598275B2 · kind B2 · utility

1Cited by
0References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 14, 2015
Grant dateMar 21, 2017
Priority date
Expiry dateJan 14, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A pressure sensor using the MEMS device comprises an airtight ring surrounding a chamber defined by the first substrate and the second substrate. The airtight ring extends from the upper surface of the second substrate to the surface between the first substrate and the second substrate and further breaks out the surface. The pressure sensor utilizes the airtight ring to retain the airtightness of the chamber. The manufacture method of the pressure sensor is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.