Patent · US Active

Memory circuit provided with bistable circuit and non-volatile element

US9601198B2 · kind B2 · utility

2Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 17, 2014
Grant dateMar 21, 2017
Priority date
Expiry dateNov 17, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/1693
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory circuit includes: a bistable circuit (30) that stores data; nonvolatile elements (MTJ1, MTJ2) that store data written in the bistable circuit in a nonvolatile manner, and restore data stored in a nonvolatile manner into the bistable circuit; and a control unit that stores data written in the bistable circuit in a nonvolatile manner and cuts off a power supply to the bistable circuit when the period not to read data from or write data into the bistable circuit is longer than a predetermined time period, and does not store data written in the bistable circuit in a nonvolatile manner and makes the supply voltage for the bistable circuit lower than a voltage during the period to read data from or write data into the bistable circuit when the period not to read or write data is shorter than the predetermined time period.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.