Semiconductor devices having a supporter and methods of fabricating the same
US9601494B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2015 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Mar 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Provided are semiconductor devices and methods of fabricating the same. The semiconductor devices include an interlayer insulating layer on a semiconductor substrate, contact pads on the semiconductor substrate and penetrating the interlayer insulating layer, a stopping insulating layer on the interlayer insulating layer, storage electrodes on the contact pads, upper supporters between upper parts of the storage electrodes, side supporters between the storage electrodes and the upper supporters, a capacitor dielectric layer on the storage electrodes, the side supporters, and the upper supporters, and a plate electrode on the capacitor dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.