Semiconductor device having sacrificial layer pattern with concave sidewalls and method fabricating the same
US9601496B2 · kind B2 · utility
1Cited by
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12Claims
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Key dates
| Filing date | Dec 17, 2013 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Nov 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/20
Abstract
In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.