Semiconductor device having asymmetrical source/drain
US9601575B2 · kind B2 · utility
19Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2016 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Jan 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.