Ultra-high pressure doping of materials
US9601641B1 · kind B1 · utility
1Cited by
134References
21Claims
0Family size
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Key dates
| Filing date | Dec 8, 2014 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus is disclosed for doping a semiconductor substrate with a dopant concentration greater than 1020 atoms per cubic centimeter. The method is suitable for producing an improved doped wide bandgap wafer for power electronic devices, photo conductive semiconductor switch, or a semiconductor catalyst.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.