Ambipolar vertical field effect transistor

US9601707B2 · kind B2 · utility

Assignee

• University of Florida Research Foundation, INC. · US

Inventors

• Andrew G. Rinzler · Newberry, US
• Bo Liu · San Diego, US
• Mitchell Austin McCarthy · Gainesville, US

Key dates

• Filing date: Nov 26, 2013
• Grant date: Mar 21, 2017
• Expiry date: Nov 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/221
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Various examples are provided for ambipolar vertical field effect transistors (VFETs). In one example, among others, an ambipolar VFET includes a gate layer; a source layer that is electrically percolating and perforated; a dielectric layer; a drain layer; and a semiconducting channel layer. The semiconducting channel layer is in contact with at least a portion of the source layer and at least a portion of the dielectric layer and the source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier. Another example includes an ambipolar vertical field effect transistor including a dielectric surface treatment layer. The semiconducting channel layer is in contact with at least a portion of the source layer and at least a portion of the dielectric surface treatment layer and where the source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.