Ultra fast semiconductor laser
US9601895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2014 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Nov 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0609
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser system includes first and second mirrors, a semiconductor laser and a high frequency pulse generator. The semiconductor laser generates optical power within an optical cavity and reflects the optical power between the first mirror and second mirrors. The optical power has a frequency of foriginal-laser. The high frequency pulse generator generates a high frequency pulse with a rise time greater than an optical cycle of the optical power within the optical cavity and directly impinges the high frequency pulse on the optical power within the optical cavity. Impinging the high frequency pulse on the optical power within the optical cavity causes a frequency shift of the optical power to generate a final laser frequency that is greater than foriginal-laser as well as beyond a frequency band of the second mirror to cause a final laser to be emitted past the second mirror and from the semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.