Semiconductor device and method of manufacturing the same
US9607861B2 · kind B2 · utility
1Cited by
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10Claims
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Key dates
| Filing date | Feb 4, 2016 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Feb 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, including steps of: (a) bonding a support plate to a first main face of a wafer, the first main face having an integrated circuit disposed thereon; (b) thinning the wafer by polishing or grinding a second main face after step (a), the second main face being opposite to the first main face; (c) dividing the wafer into multiple chip bodies concurrently with or after step (b); (d) bonding multiple reinforcing layers to second main faces of the respective chip bodies after step (c); and (e) removing the support plate after step (d).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.