High-z oxide nanoparticles embedded in semiconductor package
US9607952B1 · kind B1 · utility
0Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Oct 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes embedding high-z oxide nanoparticles in a semiconductor package of a semiconductor packaged assembly, wherein the high-z nanoparticles are operative to emit electron radiation when exposed to a radiation source to render a semiconductor device in the semiconductor package inoperable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.