ESD-protection circuit for integrated circuit device
US9607978B2 · kind B2 · utility
8Cited by
11References
46Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2014 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jan 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A double-diffused metal oxide semiconductor (DMOS) structure is configured as an open drain output driver having electrostatic discharge (ESD) protection and a reverse voltage blocking diode inherent in the structure and without requiring metal connections for the ESD and reverse voltage blocking diode protections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.