Semiconductor device
US9607983B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 18, 2014 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jun 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A semiconductor device is formed, the semiconductor device including: an SOI substrate; field insulating films that are formed on the SOI substrate and that separate a plurality of element formation regions; first and second HV pMOSs, and first and second LV pMOSs that are formed in the plurality of element formation regions; a first interlayer insulating film and a second interlayer insulating film formed on the SOI substrate; a mold resin formed on the second interlayer insulating film; and conductive films that are formed on the first interlayer insulating film and that are interposed between the plurality of element formation regions, and the field insulating films and mold resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.