Reversed flexible TFT back-panel by glass substrate removal
US9608017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Mar 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/231
Abstract
The process of fabricating a flexible TFT back-panel includes depositing etch stop material on a glass support. A matrix of contact pads, gate electrodes and gate dielectric are deposited overlying the etch stop material. Vias are formed through the dielectric in communication with each pad. A matrix of TFTs is formed by depositing and patterning metal oxide semiconductor material to form an active layer of each TFT overlying the gate electrode. Source/drain metal is deposited on the active layer and in the vias in contact with the pads, the source/drain metal defining source/drain terminals of each TFT. Passivation material is deposited in overlying relationship to the TFTs. A color filter layer is formed on the passivation material and a flexible plastic carrier is affixed to the color filter. The glass support member and the etch stop material are then etched away to expose a surface of each of the pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.