Isolation structure for semiconductor device
US9608060B2 · kind B2 · utility
1Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Nov 6, 2014 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jan 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/421
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the semiconductor device. The isolating structure has a roughness surface at a sidewall of the isolating structure, and the roughness surface includes carbon atoms thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.