IGBT and IGBT manufacturing method
US9608071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2012 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Feb 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
An IGBT manufacturing method is provided. The IGBT has an n-type emitter region, a p-type top body region, an n-type intermediate region, a p-type bottom body region, an n-type drift region, a p-type collector region, trenches penetrating the emitter region, the top body region, the intermediate region and the bottom body region from an upper surface of a semiconductor substrate and reaching the drift region, and gate electrodes formed in the trenches. The method includes forming the trenches on the upper surface of the semiconductor substrate, forming the insulating film in the trenches, forming an electrode layer on the semiconductor substrate and in the trenches after forming the insulating film, planarizing an upper surface of the electrode layer, and implanting n-type impurities to a depth of the intermediate region from the upper surface side of the semiconductor substrate after planarizing the upper surface of the electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.