Semiconductor device and method of manufacturing semiconductor device
US9608073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Nov 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/567
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device comprising: a first conductivity type base layer having a MOS gate structure formed on its front surface side; a second conductivity type first collector layer formed on a rear surface side of the base layer; a second conductivity type second collector layer formed on a rear surface side of the first collector layer with a material the same with that of the base layer, the second collector layer formed to be thinner than the first collector layer and having a higher impurity concentration than that of the first collector layer; a collector electrode formed on a rear surface side of the second collector layer; and a second conductivity type separation layer surrounding the MOS gate structure on a front surface side of the base layer and formed from a front surface of the base layer to a front surface of the first collector layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.