Semiconductor device
US9608083B2 · kind B2 · utility
1Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jun 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.