Semiconductor device and method for manufacturing the same
US9608108B2 · kind B2 · utility
0Cited by
1References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 25, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Aug 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate has a main surface with an n type offset region having a trench portion formed of a plurality of trenches extending in a direction from an n+ drain region toward an n+ source region. The plurality of trenches each have a conducting layer therein extending in the main surface in the direction from the n+ drain region toward the n+ source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.