Semiconductor device including field effect transistors
US9608114B2 · kind B2 · utility
5Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2016 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jan 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A semiconductor device includes a buffer layer on a substrate, the buffer layer having a lattice constant different from that of the substrate, a fin structure upwardly protruding from the buffer layer, a gate electrode crossing over the fin structure, a cladding layer at a side of the fin structure and covering a top surface and sidewalls of the fin structure, and an interfacial layer between the cladding layer and the fin structure, the interfacial layer including a same element as the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.