Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

US9608141B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Talia S. Gershon · White Plains, US
• Oki Gunawan · Westwood, US
• Richard A. Haight · Mahopac, US
• Yun Seog Lee · White Plains, US

Key dates

• Filing date: Dec 14, 2015
• Grant date: Mar 28, 2017
• Expiry date: Dec 14, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag2ZnSn(S,Se)4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.