Transistor element
US9608217B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 27, 2012 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Apr 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/103
Abstract
The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.