Method for producing semiconductor laser elements and semi-conductor laser element

US9608401B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Roland Enzmann · Regensburg, DE
• Markus Horn · Straubing, DE
• Markus Graul · Regensburg, DE
• Thomas Nicolas Emmanuel Veit · Leipzig, DE
• Juergen Dachs · Baar-Ebenhausen, DE
• Stefan Listl · Nittendorf, DE
• Markus Arzberger · Sunnyvale, US

Key dates

• Filing date: Dec 17, 2013
• Grant date: Mar 28, 2017
• Expiry date: Dec 17, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/323
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Method for producing semiconductor laser elements (1) comprises A) providing a carrier composite (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a semiconductor layer sequence (32) grown thereon, C) generating predetermined breaking points (35) on a substrate underside (34) of the growth substrate (31), said substrate underside facing away from the semiconductor layer sequence (32), D) attaching the laser bar (30) to a carrier upper side (23) of the carrier composite (20), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (1), wherein steps B) to E) are performed in the indicated sequence.