Long wavelength quantum cascade lasers based on high strain composition
US9608408B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2013 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | May 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34346
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved longwave infrared quantum cascade laser. The improvement includes a strained InxGa1-xAs/AlyIn1-yAs composition, with x and y each between 0.53 and 1, an active region emitting at a wavelength equal to or greater than 8 μm, an energy spacing E54 equal to or greater than 50 meV, an energy spacing EC4 equal to or greater than 250 meV, and an optical waveguide with a cladding layer on each side of the active region. Each cladding layer has a doping level of about 2·1016 cm−3. The optical waveguide also has a top InP layer with a doping level of about 5·1016 cm−3 and a bottom InP layer with a doping level of about 5 1016 cm−3. Additionally, the optical waveguide has a plasmon layer with a doping level of about 8·1018 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.