Patent · US Active

Through-wafer interconnects for MEMS double-sided fabrication process (TWIDS)

US9611138B2 · kind B2 · utility

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Key dates

Filing dateOct 12, 2015
Grant dateApr 4, 2017
Priority date
Expiry dateOct 12, 2035

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81B2207/07
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A high-aspect ratio low resistance through-wafer interconnect for double-sided (TWIDS) fabrication of microelectromechanical systems (MEMS) serves as an interconnection method and structure for co-integration of MEMS and integrated circuits or other microcomponent utilizing both sides of the wafer. TWIDS applied to a three dimensional folded TIMU (timing inertial measurement unit) provides a path for electrical signals from sensors on the front side of the SOI wafer to electronic components on the back side of the wafer, while enabling folding of an array of sensors in a three dimensional shape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.