Silicon optical modulator using asymmetric shallow waveguide and the method to make the same
US9612459B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2014 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Aug 24, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/212
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides methods of forming an optical device, in particular, a silicon optical modulator using shallow rib waveguide structure. According to the embodiments of the present invention, the silicon optical waveguide modulator includes a shallow rib waveguide with asymmetric shoulder heights disposed on a surface of a substrate; one side terminated by the waveguide edge and the other side terminated by a second laterally oriented PN junction, a first vertically oriented PN junction is positioned inside the light propagation region of the waveguide; and higher doping regions with the same type of doping type of the adjoining regions are positioned on the asymmetric shoulders outside the light propagation regions in electrical contact with metal contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.