Patent · US Active

Touch sensing structure

US9612698B2 · kind B2 · utility

0Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 7, 2014
Grant dateApr 4, 2017
Priority date
Expiry dateJan 10, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2203/04111
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A touch sensing structure including a plastic substrate, a buffer layer, an electrode layer, an insulation unit, and a passivation layer is provided. The buffer layer is disposed on the plastic substrate, and the electrode layer includes a first patterned transparent electrode layer and a second patterned transparent electrode layer. The first patterned transparent electrode layer is disposed on the buffer layer, and the second patterned transparent electrode layer is disposed on the buffer layer. The insulation unit insulates the first patterned transparent electrode layer and the second patterned transparent electrode layer, and the passivation layer is disposed on the electrode layer. Twice a total optical path length of the electrode layer and the passivation layer along a direction substantially parallel to a normal direction of the plastic substrate ranges from 1000 nm to 2500 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.