Methods of manufacturing semiconductor devices including an oxide layer
US9613800B2 · kind B2 · utility
0Cited by
6References
8Claims
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Key dates
| Filing date | Feb 18, 2015 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Feb 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.