Silicon carbide semiconductor devices having nitrogen-doped interface
US9613810B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2016 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Oct 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.