Fin field effect transistors and fabrication method thereof

US9613960B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Yong Li · Chaole, CN
• Chengqing Wei · Shanghai, CN

Key dates

• Filing date: Dec 21, 2015
• Grant date: Apr 4, 2017
• Expiry date: Dec 21, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming FinFETs includes providing a semiconductor substrate having at least a first fin in a first region and at least a second fin in a second region, and a first gate structure over the first fin and a second gate structure over the second fin; forming a first stress layer on the first fin and a first cover layer on the first stress layer; forming a second stress layer on the second fin and a second cover layer on the second stress layer; performing a first potential barrier reducing ion implantation process on the first cover layer; performing a second potential barrier reducing ion implantation process on the second cover layer; forming a first metal layer and a second metal layer; and forming a first contact layer on the first cover layer and a second contact layer on the second cover layer.