Method of fabricating semiconductor light emitting device
US9614121B1 · kind B1 · utility
1Cited by
40References
20Claims
0Family size
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Key dates
| Filing date | Aug 16, 2016 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Aug 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
Abstract
A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature, and forming a second conductivity-type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.