Substrate having annealed aluminum nitride layer formed thereon and method for manufacturing the same
US9614124B2 · kind B2 · utility
2Cited by
1References
17Claims
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Key dates
| Filing date | Feb 27, 2015 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN), and an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater. The aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and the nitrogen/carbon monoxide (N2/CO) mixed gas has a mixture ratio of N2 gas/CO gas in a range of 0.95/0.05 to 0.4/0.6.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.