Light-emitting device and method of manufacturing thereof
US9614127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2013 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Jul 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8314
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.