Armature-clad MRAM device

US9614146B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• CROCUS TECHNOLOGY INC. · US

Inventors

• Anthony J. Annunziata · Stamford, US
• Erwan Gapihan · White Plains, US

Key dates

• Filing date: Jul 28, 2016
• Grant date: Apr 4, 2017
• Expiry date: Jul 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.