Image sensor and method of manufacturing the same
US9615041B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2015 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Feb 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.