Semiconductor physical quantity sensor
US9618412B2 · kind B2 · utility
0Cited by
7References
14Claims
0Family size
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Key dates
| Filing date | Aug 8, 2014 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Aug 8, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B3/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor physical quantity sensor includes: a first base material; an electrode formed on the first base material; a diaphragm which bends in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space (S) in between; and an insulator formed on a surface on the first base material side of the diaphragm. Moreover, a wall portion to define the space (S) is formed between the insulator and the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.