Patent · US Active

Electro-absorption optical modulation device and method of fabricating the same

US9618776B2 · kind B2 · utility

2Cited by

9References

15Claims

0Family size

Assignee

KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

In Gyoo Kim · Daejeon, KR
Gyungock Kim · Daejeon, KR
Sang Hoon Kim · Daejeon, KR

Key dates

Filing date	Sep 8, 2015
Grant date	Apr 11, 2017
Priority date	—
Expiry date	Sep 8, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG02F1/0157
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.