System, method, and program for predicting processing shape by plasma process
US9620338B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 11, 2011 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Dec 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system, a method, and a program for predicting a processing shape formed by a plasma process, including databases for apparatus condition, incident ion, incident radical, actual measurement, material property and surface reaction, as well as a trajectory calculation unit, and a surface shape calculation unit. The trajectory calculation unit calculates the trajectories of the respective ions incident on the surface of the substrate based on information and data obtained from the databases and from measurement data from an on-wafer monitoring sensor. Based on the calculation result by the trajectory calculation unit, the surface shape calculation unit calculates the change of the shape by referring to the data stored in the material property and surface reaction DB.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.