Patent · US Active

Production method

US9620375B2 · kind B2 · utility

0Cited by
8References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 26, 2015
Grant dateApr 11, 2017
Priority date
Expiry dateJun 8, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B26/0833
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A production methods includes providing a substrate including a lattice plane that extends in a non-symmetrical manner and such that it is offset at an angle α from at least a first or second main surface region of the substrate, the first and second main surface regions extending parallel to each other; anisotropic etching, starting from the first main surface region, into the substrate so as to obtain an etching structure which includes, in a plane extending perpendicularly to the first main surface region, two different etching angles relative to the first main surface region; arranging a cover layer on the first main surface region, so that the cover layer lies against the etching structure in at least some sections; and removing, section-by-section, the material of the substrate starting from the second main surface region in the area of the deformed cover layer, so that the cover layer is exposed in at least one window region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.