High temperature bonding processes incorporating metal particles and bonded substrates formed therefrom
US9620434B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2016 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Mar 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of bonding a first substrate to a second substrate includes disposing a first high melting point metal layer onto a first substrate, disposing a first low melting point metal layer onto the first high melting point metal layer, disposing a second high melting point metal layer onto a second substrate, and disposing a second low melting point metal layer onto the second high melting point metal layer. The method further includes applying precursor metal particles onto the first and/or second low melting point metal layers, positioning the first and second low melting point metal layers such that the precursor metal particles contact both the first and second low melting point metal layers, and bonding the first substrate to the second substrate by heating the precursor metal particles and each metal layer to form an intermetallic alloy bonding layer between the first and second substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.