Stacked protection devices with overshoot protection and related fabrication methods

US9620496B2 · kind B2 · utility

Assignee

• NXP USA, Inc. · US

Inventors

• Weize Chen · Phoenix, US
• Hubert M. Bode · Haar, DE
• Andreas Laudenbach · Alzenau, DE
• Kurt U. Neugebauer · Vaterstetten, DE
• Patrice M. Parris · Phoenix, US

Key dates

• Filing date: Mar 10, 2015
• Grant date: Apr 11, 2017
• Expiry date: May 8, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/711

Abstract

Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.