Manufacturing method of transistor with floating gate and application method of transistor with floating gate electrode
US9620532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2013 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Mar 13, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/045
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure disclose a transistor with floating gate electrode, a manufacturing method thereof, an application method thereof and a display driving circuit. The transistor with floating gate electrode includes a substrate (1), and a floating gate electrode (3), a source electrode (4), a drain electrode (5) and a control gate electrode (6) disposed on the substrate (1). The transistor with floating gate electrode further comprises a first insulating film (7) and a polysilicon film (8) that are sequentially disposed on the substrate (1), and a channel region (2) is formed in the polysilicon film (8) at a position corresponding to the floating gate electrode (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.