Power semiconductor device with source trench and termination trench implants
US9620583B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2015 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A power semiconductor device is disclosed. The power semiconductor device includes a source region in a body region, a gate trench adjacent to the source region, and a source trench electrically coupled to the source region. The source trench includes a source trench conductive filler surrounded by a source trench dielectric liner, and extends into a drift region. The power semiconductor device includes a source trench implant below the source trench and a drain region below the drift region, where the source trench implant has a conductivity type opposite that of the drift region. The power semiconductor device may also include a termination trench adjacent to the source trench, where the termination trench includes a termination trench conductive filler surrounded by a termination trench dielectric liner. The power semiconductor device may also include a termination trench implant below the termination trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.