Semiconductor device and method of manufacturing a semiconductor device
US9620616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2014 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Dec 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
Abstract
A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that attains p-type, the etching stop layer being formed of a material that includes GaN, removing the p-type film in an area except an area where a gate electrode is to be formed, by dry etching to form a p-type layer in the area where the gate electrode is to be formed, the dry etching being conducted while plasma emission in the dry etching is observed, the dry etching being stopped after the dry etching is started and plasma emission originating from Al is not observed, and forming the gate electrode on the p-type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.