Kind of power tri-gate LDMOS

US9620638B1 · kind B1 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Xiaorong Luo · Chengdu, CN
• Weiwei Ge · Hangzhou City, CN
• Junfeng Wu · 安丰镇, CN
• Da zhong Ma · Shenyang, CN
• Mengshan Lv · Chengdu, CN
• Linhua HUANG · Chengdu, CN
• Qing Liu · Tianjin, CN
• Tao Sun · Nanjing, CN

Key dates

• Filing date: Aug 31, 2016
• Grant date: Apr 11, 2017
• Expiry date: Aug 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A tri-gate laterally-diffused metal oxide semiconductor (LDMOS), including a substrate, a P-type semiconductor region, a P-type contact region, an N-type source region, a gate dielectric layer, an N-type drift region, a first isolation dielectric layer, an N-type drain region, and a second isolation dielectric layer. The P-type semiconductor region is disposed on one end of an upper surface of the substrate, and the N-type drift region is disposed on another end of the upper surface. The P-type semiconductor region contacts with the N-type drift region. The P-type contact region and the N-type source region are disposed on one side of the P-type semiconductor region which is away from the N-type drift region, and compared with the P-type contact region, the N-type source region is in the vicinity of the N-type drift region.